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JAPANESE JOURNAL OF APPLIED PHYSICS

2024年6月最新影响因子数据已经更新，欢迎查询！ 如果您对期刊系统有任何需求或者问题，欢迎点击此处反馈给我们。

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期刊名:   ISSN:   研究方向:   影响因子: -   SCI收录:
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JAPANESE JOURNAL OF APPLIED PHYSICS期刊基本信息Hello，您是该期刊的第152079位访客

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期刊名字JAPANESE JOURNAL OF APPLIED PHYSICSJAPANESE JOURNAL OF APPLIED PHYSICS

JPN J APPL PHYS
（此期刊被最新的JCR期刊SCIE收录）

LetPub评分
5.9
60人评分
我要评分

声誉
6.5

影响力
4.7

速度
9.2

期刊ISSN0021-4922
微信扫码收藏此期刊
E-ISSN1347-4065
2023-2024最新影响因子
（数据来源于搜索引擎）		1.5 点击查看影响因子趋势图
实时影响因子 截止2024年10月29日：1.419
2023-2024自引率26.70%点击查看自引率趋势图
五年影响因子1.3
JCI期刊引文指标 0.3
h-index 116
CiteScore
（ 2024年最新版）
CiteScoreSJRSNIPCiteScore排名
3.000.3070.631
学科分区排名百分位
大类：Engineering
小类：General Engineering		Q2119 / 307
大类：Engineering
小类：General Physics and Astronomy		Q2108 / 243

期刊简介
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).

JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:

• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
期刊官方网站http://jjap.jsap.jp/
期刊投稿网址http://jjap.jsap.jp/authors/submission.html
期刊语言要求经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件，不仅能满足JAPANESE JOURNAL OF APPLIED PHYSICS的语言要求，还能让JAPANESE JOURNAL OF APPLIED PHYSICS编辑和审稿人得到更好的审稿体验，让稿件最大限度地被JAPANESE JOURNAL OF APPLIED PHYSICS编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务（包括SCI论文英语润色，同行资深专家修改润色，SCI论文专业翻译，SCI论文格式排版，专业学术制图等）帮助作者准备稿件，已助力全球15万+作者顺利发表论文。部分发表范例可查看：服务好评 论文致谢（1篇） 。
提交文稿
是否OA开放访问No
通讯方式JAPAN SOC APPLIED PHYSICS, KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, JAPAN, 102-0073
出版商Japan Society of Applied Physics
涉及的研究方向物理-物理：应用
出版国家或地区JAPAN
出版语言English
出版周期Monthly
出版年份0
年文章数 839点击查看年文章数趋势图
Gold OA文章占比9.51%
研究类文章占比：
文章 ÷（文章 + 综述）		93.80%
WOS期刊SCI分区
（ 2023-2024年最新版）		WOS分区等级：3区

按JIF指标学科分区收录子集JIF分区JIF排名JIF百分位
学科：PHYSICS, APPLIEDSCIEQ3134/179
按JCI指标学科分区收录子集JCI分区JCI排名JCI百分位
学科：PHYSICS, APPLIEDSCIEQ4140/179
中国科学院《国际期刊预警
名单（试行）》名单 		2024年02月发布的2024版：不在预警名单中

2023年01月发布的2023版：不在预警名单中

2021年12月发布的2021版：不在预警名单中

2020年12月发布的2020版：不在预警名单中
中国科学院SCI期刊分区
（ 2023年12月最新升级版） 		点击查看中国科学院SCI期刊分区趋势图
大类学科小类学科Top期刊综述期刊
物理与天体物理 4区4区2区
PHYSICS, APPLIED
物理：应用		4区1区4区
否否
中国科学院SCI期刊分区
（ 2022年12月升级版）
大类学科小类学科Top期刊综述期刊
物理与天体物理 4区4区1区
PHYSICS, APPLIED
物理：应用		3区1区4区
否否
中国科学院SCI期刊分区
（ 2021年12月旧的升级版）
大类学科小类学科Top期刊综述期刊
物理与天体物理 3区4区2区
PHYSICS, APPLIED
物理：应用		2区4区4区
否否
SCI期刊收录coverage Science Citation Index Expanded (SCIE) (2020年1月，原SCI撤销合并入SCIE，统称SCIE)
Scopus (CiteScore)
PubMed Central (PMC)链接http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0021-4922%5BISSN%5D
平均审稿速度网友分享经验：
平均2.0个月
平均录用比例网友分享经验：
66%
APC文章处理费信息
版面费：平均 4733 元/页
LetPub助力发表经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍，平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务（包括SCI论文英语润色，同行资深专家修改润色，SCI论文专业翻译，SCI论文格式排版，专业学术制图等）后论文在JAPANESE JOURNAL OF APPLIED PHYSICS顺利发表。
快看看作者怎么说吧：服务好评 论文致谢
期刊常用信息链接
同领域相关期刊 JAPANESE JOURNAL OF APPLIED PHYSICS期刊近年CiteScore指标趋势图
该杂志的自引率趋势图 JAPANESE JOURNAL OF APPLIED PHYSICS中国科学院SCI期刊分区趋势图
该杂志的年文章数趋势图 同领域作者分享投稿经验
JAPANESE JOURNAL OF APPLIED PHYSICS上中国学者近期发表的论文  
  • 同领域相关期刊
  • 期刊CiteScore趋势图
  • 期刊自引率趋势图
  • 中国科学院分区趋势图
  • 年文章数趋势图
  • 该期刊中国学者近期发文
  • 中国科学院分区相关期刊
  • 同类著名期刊名称 h-index CiteScore
    APPLIED PHYSICS LETTERS4016.40
    JOURNAL OF PHYSICS D-APPLIED PHYSICS1726.80
    JOURNAL OF APPLIED PHYSICS2945.40
    Applied Physics Express794.80
    METROLOGIA672.80
    JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY512.90
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS792.70
    REVIEW OF SCIENTIFIC INSTRUMENTS1453.00
    TECHNICAL PHYSICS291.30
    HIGH TEMPERATURE251.50
    中国科学院SCI期刊分区同大类学科的热搜期刊 浏览次数
    APPLIED PHYSICS LETTERS1118526
    OPTICS EXPRESS924579
    JOURNAL OF APPLIED PHYSICS665555
    PHYSICAL REVIEW LETTERS589875
    OPTICS AND LASER TECHNOLOGY581690
    OPTICS LETTERS552392
    OPTIK512930
    AIP Advances462391
    OPTICS COMMUNICATIONS450768
    JOURNAL OF PHYSICS D-APPLIED PHYSICS445137
  •  

    JAPANESE JOURNAL OF APPLIED PHYSICS JAPANESE JOURNAL OF APPLIED PHYSICS
    我来预测明年：
    稳步上升 表现平稳 逐渐下降　 刷新
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  • 中国学者近期发表的论文
    1.Core and filamentary damage of fused silica induced by nanosecond laser at 1064 nm

    Author: Zhang, Fawang; Wang, Biyi; Liu, Xinyi; Xu, Man; Liu, Hufeng; Miao, Xinxiang; Lu, Tao; Qiu, Rong; Guo, Decheng; Zhou, Qiang; Jiang, Yong
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/aca3e4        DOI
    2.Improved performance of enhancement-mode GaN MIS-FET based on a self-terminating gate recess etching technique with in situ NH3 pre-treatment

    Author: Zhang, Bin; Wang, Jinyan; Li, Mengjun; Huang, Chengyu; He, Jiayin; Wang, Xin; Wang, Chen; Wang, Hongyue; Mo, Jianghui; Wang, Maojun; Wu, Wengang
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/aca3e3        DOI
    3.2D scalar wave modelling of apodized RF BAW resonators for transverse mode analysis

    Author: Wu, Ting; He, Yi-wen; Wong, Yu-po; Li, Wuping; Bao, Jing-fu; Hashimoto, Ken-ya
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/aca5d8        DOI
    4.Electrical and optical properties of highly crystalline W-VO2 nano-films prepared by thermal oxidation of V-WO3 precursors

    Author: Luo, Jie; Gong, Mengtao; Tian, Shouqin; Zhou, Lincan; Zheng, Tao; Zhao, Xiujian; Liu, Baoshun
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/acae68        DOI
    5.Investigation of PVT variation on single-event transient effect assisted with hardened layout techniques

    Author: Liang, Bin; Luo, Deng; Sun, Qian; Chen, Yanrong; Zhang, Kangkai; Chen, Wangyong
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/aca7a6        DOI
    6.TO1 soft mode in Fe doped beta-Ga2O3 studied by terahertz time-domain spectroscopy

    Author: Jiang, Hao; Wang, Ke; Gong, Chen; Murakami, Hironaru; Tonouchi, Masayoshi
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/acae52        DOI
    7.Influence of anti-phase surface relief structure on optical mode and laser output power for 450 nm GaN-based VCSELs

    Author: Gao, Yuanbin; Chu, Chunshuang; Hang, Sheng; Zhang, Yonghui; Zhou, Jianwei; Zhang, Zi-Hui
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/acaba0        DOI
    8.Heterogeneous integration of lithium tantalate thin film on quartz for high performance surface acoustic wave resonator

    Author: Chen, Yang; Wu, Jinbo; Zhao, Xiaomeng; Li, Zhongxu; Ke, Xinjian; Zhang, Shibin; Zhou, Min; Huang, Kai; Ou, Xin
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/aca5d7        DOI
    9.Effect of RF power and gas ratio on the sidewall of beta-Ga2O3 films via inductively coupled plasma etching

    Author: Bian, Chunxu; Zhang, Xiaodong; Tang, Wenbo; Zhang, Li; Ma, Yongjian; Chen, Tiwei; Zhou, Xin; Li, Botong; Tang, Jilong; Zeng, Zhongming; Zhang, Baoshun
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 1, pp. -. DOI: 10.35848/1347-4065/acb40e        DOI
    10.The impacts of localized backside etching on proton radiation response in SOI passive devices

    Author: Zhao, Biyao; Bi, Jinshun; Ma, Yue; Zhang, Jian; Wang, Yan; Fan, Linjie; Han, Tingting; Xuan, Yundong; Stempitsky, Viktor; Liu, Mengxin
    Journal: JAPANESE JOURNAL OF APPLIED PHYSICS. 2023; Vol. 62, Issue 2, pp. -. DOI: 10.35848/1347-4065/acb40f        DOI
  • 同大类学科的其他著名期刊名称 h-index CiteScore
    REVIEWS OF MODERN PHYSICS29876.20
    Nature Reviews Physics047.80
    ADVANCES IN PHYSICS10467.60
    Nature Photonics26654.20
    ASTRONOMY AND ASTROPHYSICS REVIEW5445.00
    Annual Review of Astronomy and Astrophysics16854.80
    Living Reviews in Relativity7569.90
    Living Reviews in Relativity069.90
    Advances in Optics and Photonics5156.60
    PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS24856.10
    同分区等级的其他期刊名称 h-index CiteScore
    Energy Material Advances013.80
    Journal of High Energy Astrophysics119.70
    VIEW012.60
    HARVARD BUSINESS REVIEW01.40
    QJM-AN INTERNATIONAL JOURNAL OF MEDICINE1086.90
    ACM Transactions on Intelligent Systems and Technology469.30
    Journal of the American Nutrition Association02.50
    TRANSACTIONS OF TIANJIN UNIVERSITY012.50
    Machine Intelligence Research06.70
    Molecular Biomedicine06.30
以上SCI期刊相关数据和信息来源于网络，仅供参考。
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