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期刊名字![]() | IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE T ELECTRON DEV (此期刊被最新的JCR期刊SCIE收录) LetPub评分 7.9
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声誉 8.4 影响力 7.4 速度 8.3 | |||||||||||||||||||||||||||||||
| 期刊ISSN | 0018-9383 | 蝌蝌APP,让您与同行交流更轻松
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| 2024-2025最新影响因子 (数据来源于搜索引擎) | 3.2 点击查看影响因子趋势图 | |||||||||||||||||||||||||||||||
| 实时影响因子 | 截止2025年5月19日:3.199 | |||||||||||||||||||||||||||||||
| 2024-2025自引率 | 15.60%点击查看自引率趋势图 | |||||||||||||||||||||||||||||||
| 五年影响因子 | 3.3 | |||||||||||||||||||||||||||||||
| JCI期刊引文指标 | 0.69 | |||||||||||||||||||||||||||||||
| h-index | 165 | |||||||||||||||||||||||||||||||
| CiteScore ( 2025年最新版) |
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| 期刊简介 |
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| 期刊官方网站 | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | |||||||||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | https://mc.manuscriptcentral.com/ted | |||||||||||||||||||||||||||||||
| 该期刊中国学者近期发文 - New | Stress-Aware Performance Optimization in Gate-All-Around NSFET and Beyond Author: Teng, Feiyu; Yan, Xiangyu; Jin, Jianxiang; Sun, Jiacheng; Wang, Runsheng; Li, Ming; Wu, Heng; Huang, Ru Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3379-3386. DOI: 10.1109/TED.2025.3569503 High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications Author: Li, Mengdi; Zhu, Jiejie; Qin, Lingjie; Zhou, Yuxi; Zhang, Bowen; Zhang, Mingchen; Su, Quanxu; Zhao, Ziyue; Zhu, Qing; Ma, Huimei; Duan, Huantao; Ma, Xiaohua; Hao, Yue Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3469-3474. DOI: 10.1109/TED.2025.3568805 Design of a Novel Reverse Magnetic System for Planar Three-Beam Array Author: Wang, Pengpeng; Ruan, Cunjun; Wang, Wenbo; Zhao, Yaqi Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3861-3867. DOI: 10.1109/TED.2025.3571703 4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution Author: Zhao, Jiuzhou; Xu, Weizong; Qu, Hao; Zhou, Dong; Pan, Danfeng; Tang, Xiaoyu; Ren, Fangfang; Zhou, Feng; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3915-3919. DOI: 10.1109/TED.2025.3571408 | |||||||||||||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE TRANSACTIONS ON ELECTRON DEVICES的语言要求,还能让IEEE TRANSACTIONS ON ELECTRON DEVICES编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE TRANSACTIONS ON ELECTRON DEVICES编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
提交文稿 | |||||||||||||||||||||||||||||||
| 是否OA开放访问 | No | |||||||||||||||||||||||||||||||
| 通讯方式 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||||||||
| 涉及的研究方向 | 工程技术-工程:电子与电气 | |||||||||||||||||||||||||||||||
| 出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||||||||
| 出版周期 | Monthly | |||||||||||||||||||||||||||||||
| 出版年份 | 0 | |||||||||||||||||||||||||||||||
| 年文章数 | 1123点击查看年文章数趋势图 | |||||||||||||||||||||||||||||||
| Gold OA文章占比 | 4.51% | |||||||||||||||||||||||||||||||
| 研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||||||||
| WOS期刊JCR分区 ( 2024-2025年最新版) | WOS分区等级:2区
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| 中国科学院《国际期刊预警 名单(试行)》名单 | 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||||||||
| 中国科学院期刊分区 ( 2025年3月最新升级版) | 点击查看中国科学院期刊分区趋势图
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| 中国科学院期刊分区 ( 2023年12月升级版) |
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| 中国科学院期刊分区 ( 2022年12月旧的升级版) |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0018-9383%5BISSN%5D | |||||||||||||||||||||||||||||||
| 平均审稿速度 | 网友分享经验: 平均4.7个月 | |||||||||||||||||||||||||||||||
| 平均录用比例 | 网友分享经验: 较易 | |||||||||||||||||||||||||||||||
| APC文章处理费信息 | 版面费:平均 3850 元/页 | |||||||||||||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE TRANSACTIONS ON ELECTRON DEVICES顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||||||||
| 期刊常用信息链接 |
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| 中国学者近期发表的论文 | |
| 1. | Stress-Aware Performance Optimization in Gate-All-Around NSFET and Beyond Author: Teng, Feiyu; Yan, Xiangyu; Jin, Jianxiang; Sun, Jiacheng; Wang, Runsheng; Li, Ming; Wu, Heng; Huang, Ru Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3379-3386. DOI: 10.1109/TED.2025.3569503 DOI |
| 2. | High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications Author: Li, Mengdi; Zhu, Jiejie; Qin, Lingjie; Zhou, Yuxi; Zhang, Bowen; Zhang, Mingchen; Su, Quanxu; Zhao, Ziyue; Zhu, Qing; Ma, Huimei; Duan, Huantao; Ma, Xiaohua; Hao, Yue Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3469-3474. DOI: 10.1109/TED.2025.3568805 DOI |
| 3. | Design of a Novel Reverse Magnetic System for Planar Three-Beam Array Author: Wang, Pengpeng; Ruan, Cunjun; Wang, Wenbo; Zhao, Yaqi Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3861-3867. DOI: 10.1109/TED.2025.3571703 DOI |
| 4. | 4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution Author: Zhao, Jiuzhou; Xu, Weizong; Qu, Hao; Zhou, Dong; Pan, Danfeng; Tang, Xiaoyu; Ren, Fangfang; Zhou, Feng; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3915-3919. DOI: 10.1109/TED.2025.3571408 DOI |
| 5. | Novel Complementary Field-Effect Transistors With Tree-Type Channel for 3-nm Technology Node Author: Zhao, Jianing; Zou, Xinyu; Shen, Yang; Zhang, Yuhang; Ye, Bingyi; Li, Xiaojin; Liu, Ziyu; Shi, Yanling; Chen, Shaoqiang; Lu, Fei; Dong, Xinyu; Sun, Yabin Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3400-3406. DOI: 10.1109/TED.2025.3572032 DOI |
| 6. | Au-In/Polymer Hybrid Bonding and Reliability of 1700 PPI Micro-LED Device Author: Yang, Zhu; Fu, Hao; Wang, Kefeng; Meng, Xinhui; Ji, Xiaoxiao; Yin, Luqiao; Lu, Xiuzhen; Zhang, Jianhua Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3646-3652. DOI: 10.1109/TED.2025.3568751 DOI |
| 7. | Generative Process Variation Modeling and Analysis for Advanced Technology Based on Variational Autoencoder Author: Xue, Liyuan; Dixit, Ankit; Kumar, Naveen; Georgiev, Vihar Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3889-3895. DOI: 10.1109/TED.2025.3570675 DOI |
| 8. | RRAM-Based NVFF: Harnessing AWT and Differential Power-Up for Enhanced Power, Speed, and Reliability Author: Wang, Yongbo; Wang, Xiaohu; Wan, Jiale; Shen, Tingying; Li, Xinyi Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3593-3597. DOI: 10.1109/TED.2025.3570994 DOI |
| 9. | Novel Silicon Epitaxy-Based Avalanche Photodetectors With Parameter-Sensitivity Engineering for Enhanced Fabrication Robustness Author: Yi, Qianchuan; Hu, Lilei; Huang, Binbing; Wang, Jiayi; Wang, Tao; Long, Tianyu; Jiang, Wenxin; Han, Tianyan; Gu, Xiaopu; Guan, Yuanjun; Zhou, Yanqi; Zhang, Yichen Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3712-3723. DOI: 10.1109/TED.2025.3572870 DOI |
| 10. | An Analytical Device Model for Vertical Channel-All-Around InGaZnO Thin-Film Transistors Author: Yi, Guangzheng; Li, Yuan; Lu, Nianduan; Yang, Guanhua; Geng, Di; Li, Ling; Yu, Jun; Nathan, Arokia Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2025; Vol. 72, Issue 7, pp. 3790-3795. DOI: 10.1109/TED.2025.3572882 DOI |
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