T Nishikawa… - US Patent 7,951,962, 2011 - Google Patents Page 1. inn iiiiiii hi mi mi iiii iiijiii iiiijii mi inn mi mi mi (12) United States Patent Nishikawa et al. (io) Patent No.: (45) Date of Patent: US 7,951,962 B2 May 31, 2011 (54) ORGANIC SEMICONDUCTOR COMPOUND, ORGANIC ... Related articles - All 3 versions
C Yan, X Zhu, J Chen, S Hai, J Xu… - US Patent …, 2011 - Google Patents ... agitator. Sulfuric acid, sodium dithion- ite and phosphoric acid were added into the kaolin slurry E in the octagonal pool. ... agitator. Sulfuric acid, sodium dithion- ite and phosphoric acid were added into the slurry E in the octagonal pool. ... Related articles - All 3 versions
CB Ward - US Patent 7,951,282, 2011 - Google Patents ... 2 In particular, if it is desired to produce electrolytic manga- nese dioxide ("EMD"), solutions containing elevated dithion- ate ion levels result in chemical reactions occurring that effect the quality and purity of the EMD produced in the electrow- inning cells. ... Cited by 2 - Related articles - All 3 versions
HS Sohn, SH Cha, WK Lee, DG Kim… - Macromolecular …, 2011 - Springer ... RAFT polymerization was chosen because it does not require a metal catalyst and also various types of vinyl monomers including methacrylate monomers can be used.11-13,15 2-Cyanoprop-2-yl-1-dithion- aphthalate (CPDN) was synthesized and used as the RAFT chain ... Related articles
MY Chaika, TA Kravchenko, EV Bulavina… - Russian Journal of …, 2011 - Springer ... 1). For sodium dithion ite, the concentration of copper on the surface of a grain is higher than in the volume of the grain; for hydrazine, the concentration of copper on surface decreases due to the removal of copper particles by the evolving gases during chemical precipitation. ... Related articles - All 3 versions
沪公网安备号：31010402006960 （网站）31010405000484 （蝌蝌APP）
安全保密
