[PDF] from utm.myD Gustiono - Journal of Fundamental Sciences, 2011 - jfs.ibnusina.utm.my ... n| Metals | Depth d om γ (fcc) to e induced by carried out us copy (CEMS) gas (Kr, Ar) io (Fe, Ni, Cr) io o the driving fo ief of high str hest efficiency mplantation w surized inclusio lid phase at ro antations with elements (Fe a mations when where is the ph altered [3,10]. ...
T Kamimura, K Sasaki… - US Patent 7,867,884, 2011 - Google Patents ... STA RT RESIST COATING EXPOSE AND DEVELOPMENT HIGH~CONCENTRAT|ON -ION MPLANTATION RESIST REMOVAL RESIST COATING S6 EXPOSURE AND DEVELOPMENT LOW-CONCENTRATION P'l0N IMPLANTATION S8 RESIST REMOVAL (56) References ... Related articles - All 4 versions
M Jiang… - Guangzhou Chemical Industry, 2011 - en.cnki.com.cn ... 6, LI U Su1,2,ZHOU Yan-min1 *,WANG Xiao-rong1,Wang Rui1(1.Depart ment of Center of I mplantation,School of Stomatology,Jilin University,Changchun 130041,China;2.Depart ment of Stomatology,Hospital of Changchun Technology University,Changchun 130012,China ... Related articles - Cached
A Bhattacharyya, L Forbes… - US Patent 7,968,960, 2011 - freepatentsonline.com ... 1991),2120-2126. Berti, M. , “Laser Induced Epitaxial Regrowth of Si1-xGex/Si Layers Produced by Ge Ion mplantation”, Applied Surface Science, 43, (1989), 158-164. Bhattacharyya, Arup , et al., “Devices and Methods to Improve Carrier Mobility”, US Appl. No. ... Related articles - Cached
J Ricol… - US Patent 20,110,172,595, 2011 - freepatentsonline.com 4. Device according to one of the above claims, characterized in that the penetrable portion (4) has a generally convex shape so as to permit access to the chamber (2) from the exterior of the device (1) along a total angular sector that is greater than or equal to 90°, ... Cached
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